| PART |
Description |
Maker |
| TC554001FL TC554001FL-10 TC554001FL-70 TC554001FL- |
524,288 WORDS x 8BIT STATIC RAM 524,288字8位静态RAM
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| TC554001FI TC554001FI-10 TC554001FI-85 TC554001FTI |
524288 WORDS x 8BIT STATIC RAM
524,288 WORDS x 8BIT STATIC RAM
|
TOSHIBA[Toshiba Semiconductor]
|
| HY62LF16806A-C HY62LF16806A-I |
High speed, super low power and 8M bit full CMOS SRAM organized as 524,288 words by 16bits
|
HYNIX
|
| TC55VD1636FFI-133 TC55VD1636FFI-150 |
524,288-WORD BY 36-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM
|
TOSHIBA
|
| TC55V16356FF-133 TC55V16356FF-167 TC55V16356FF-150 |
524,288-WORD BY 36-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM
|
TOSHIBA
|
| MSM27C1655CZ |
524,288-Double Word x 32-Bit or 1,048,576-Word x 16-Bit 4-Double Word x 32-Bit or 8-Word x 16-Bit Page Mode One Time PROM 524,288 -双字× 32位或1048576字16 -双字× 32位或8字16位页面模式一次性可编程
|
OKI electronic components
OKI electronic componets
OKI SEMICONDUCTOR CO., LTD.
|
| MSM534052E |
From old datasheet system
262,144-Words x 16-bit or 524,288-Bytes x 8-bit MaskROM 8Words x 16-Bit or 16Bytes x 8-Bit/Page Mode MASKROM
262144-Words x 16-bit or 524288-Bytes x 8-bit MaskROM 8Words x 16-Bit or 16Bytes x 8-Bit/Page Mode MASKROM
|
OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
OKI electronic components
|
| HY62SF16804A-I HY62SF16804A-C HY62SF16804A-SM10I |
512K X 16 STANDARD SRAM, 100 ns, PBGA48
High speed, super low power and 8M bit full CMOS SRAM organized as 524,288 words by 16bits
|
HYNIX SEMICONDUCTOR INC
|
| TC554001 TC554001AF TC554001AF-10 TC554001AF-10L T |
LJT 66C 66#22D PIN PLUG 524228字8位静态RAM
524,228 WORDS x 8 BIT STATIC RAM 524228字8位静态RAM
Circular Connector; No. of Contacts:32; Series:MS27467; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:19; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:19-32 RoHS Compliant: No
524228 WORDS x 8 BIT STATIC RAM
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| AM29F040-90PCB AM29F040-90FCB AM29F040-90ECB AM29F |
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PDSO32
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PQCC32
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PDIP32
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 4兆位24,288 × 8位）的CMOS 5.0伏只，扇区擦除闪
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 150 ns, PDIP32
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 55 ns, PDSO32
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| HY62SF16806B-I HY62SF16806B-C |
High speed, super low power and 8Mbit full CMOS SRAM organized as 524,288 words by 16bits
|
HYNIX
|
